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Proceedings Paper

Process latitude simulation of positive-tone litho-litho-etch double patterning
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Paper Abstract

Double patterning (DP) techniques are emerging as the dominant method to achieve the 32 nm node and beyond. While several DP approaches exist, the litho-litho-etch (LLE) process is attractive for reduced manufacturing cost.[1] Previously published LLE work explored the process latitude in the "positive/negative LLE" regime, wherein the first resist layer is imaged by positive-tone resist and the second resist layer is imaged in negative-tone.[2] In this paper, simulation-based techniques are used to determine the process latitude in the "positive/positive LLE" system. By using the same resist material for first- and second-pass lithography, optical properties are nearly matched. However, a conformal barrier film or other chemical modification must be applied to inhibit the solubility of the firstpass topography and maintain immiscibility between layers. The consequences of choosing a positive-tone resist for both the first- and second-pass are investigated for target CD at 88 nm pitch. Process latitude is characterized using full resist models, reaction-diffusion kinetic solvers, including diffusion-limiting boundary conditions.

Paper Details

Date Published: 1 April 2009
PDF: 11 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731H (1 April 2009); doi: 10.1117/12.816581
Show Author Affiliations
Wallace P. Printz, Tokyo Electron America, Inc. (United States)
Steven A. Scheer, Tokyo Electron America, Inc. (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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