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Proceedings Paper

Zinc oxide and related compounds: order within the disorder
Author(s): R. Martins; Luisa Pereira; P. Barquinha; I. Ferreira; R. Prabakaran; G. Goncalves; A. Goncalves; E. Fortunato
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Paper Abstract

This paper discusses the effect of order and disorder on the electrical and optical performance of ionic oxide semiconductors based on zinc oxide. These materials are used as active thin films in electronic devices such as pn heterojunction solar cells and thin-film transistors. Considering the expected conduction mechanism in ordered and disordered semiconductors the role of the spherical symmetry of the s electron conduction bands will be analyzed and compared to covalent semiconductors. The obtained results show p-type c-Si/a-IZO/poly-ZGO solar cells exhibiting efficiencies above 14%, in device areas of about 2.34 cm2. Amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance than the polycrystalline TFTs based on ZnO, translated by ION/IOFF ratio exceeding 107, turn-on voltage below 1-2 V and saturation mobility above 25 cm2/Vs. Apart from that, preliminary data on p-type oxide TFT based on the Zn-Cu-O system will also be presented.

Paper Details

Date Published: 12 February 2009
PDF: 13 pages
Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170B (12 February 2009); doi: 10.1117/12.816577
Show Author Affiliations
R. Martins, New Univ. of Lisbon (Portugal)
Luisa Pereira, New Univ. of Lisbon (Portugal)
P. Barquinha, New Univ. of Lisbon (Portugal)
I. Ferreira, New Univ. of Lisbon (Portugal)
R. Prabakaran, New Univ. of Lisbon (Portugal)
G. Goncalves, New Univ. of Lisbon (Portugal)
A. Goncalves, New Univ. of Lisbon (Portugal)
E. Fortunato, New Univ. of Lisbon (Portugal)

Published in SPIE Proceedings Vol. 7217:
Zinc Oxide Materials and Devices IV
Ferechteh Hosseini Teherani; Cole W. Litton; David J. Rogers, Editor(s)

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