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Proceedings Paper

Immersion BARC for hyper NA applications
Author(s): Wan-Ju Tseng; Wen Liang Huang; Bill Lin; Bo Jou Lu; Tsung Ju Yeh; E. T. Liu; Chun Chi Yu; Sue Ryeon Kim; Jeong Yun Yu; Gerald Wayton; Sook Lee; Sabrina Wong; Chaoyang Lin; Maurizio Ciambra; Suzanne Coley; David Praseuth; Kathleen O'Connell; George Barclay
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Paper Abstract

Reflectivity control through angle is challenging at hyper NA, especially for Logic devices which have various pitches in the same layer. When patterning critical layers, a multilayer antireflectant system is required in order to control complex reflectivity resulting from various incident angles. Multilayer antireflectants typically consist of an organic and inorganic (TiN and SiON) layers. Fewer or thinner layers are desired for etch pattern transfer. However, it would make the reflectivity control through angle more difficult. We have investigated several antireflectants for a simplified multilayer stack. The organic films differ in terms of n, k, thickness and etch rate. The n, k, and thickness span the ranges of 1.60-1.85, 0.15-0.30, and 30-130nm, respectively. The overall patterning performance including profiles, line width roughness (LWR), overlap depth of focus margin (ODOF) and critical dimension uniformity (CDU) has been evaluated. An immersion tool at 1.35NA was used to perform lithography. Simulation was performed using ProlithTM software.

Paper Details

Date Published: 10 April 2009
PDF: 7 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727317 (10 April 2009); doi: 10.1117/12.816393
Show Author Affiliations
Wan-Ju Tseng, United Microelectronics Corp. (Taiwan)
Wen Liang Huang, United Microelectronics Corp. (Taiwan)
Bill Lin, United Microelectronics Corp. (Taiwan)
Bo Jou Lu, United Microelectronics Corp. (Taiwan)
Tsung Ju Yeh, United Microelectronics Corp. (Taiwan)
E. T. Liu, United Microelectronics Corp. (Taiwan)
Chun Chi Yu, United Microelectronics Corp. (Taiwan)
Sue Ryeon Kim, Rohm and Haas Electronic Materials LLC (United States)
Jeong Yun Yu, Rohm and Haas Electronic Materials LLC (United States)
Gerald Wayton, Rohm and Haas Electronic Materials LLC (United States)
Sook Lee, Rohm and Haas Electronic Materials LLC (United States)
Sabrina Wong, Rohm and Haas Electronic Materials LLC (United States)
Chaoyang Lin, Rohm and Haas Electronic Materials LLC (United States)
Maurizio Ciambra, Rohm and Haas Electronic Materials LLC (United States)
Suzanne Coley, Rohm and Haas Electronic Materials LLC (United States)
David Praseuth, Rohm and Haas Electronic Materials LLC (United States)
Kathleen O'Connell, Rohm and Haas Electronic Materials LLC (United States)
George Barclay, Rohm and Haas Electronic Materials LLC (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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