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Proceedings Paper

Lead-chalcogenide VECSELs on Si and BaF2 for 5 μm emission
Author(s): M. Rahim; A. Khiar; F. Felder; M. Fill; D. Boye; H. Zogg
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Paper Abstract

Optically pumped VECSELs (vertical external cavity surface emitting lasers) with above 5 μm emission wavelength were fabricated on BaF2 and Si substrates. The active layer is just 1 - 2 μm thick PbTe or PbSe, and epitaxial PbEuTe/BaF2 or PbSrTe/EuTe Bragg mirrors are employed. On BaF2 substrates, output powers up to 260 mW pulsed and 3 mW cw at 100 K are obtained. The VECSEL presently operate up to 175 K with PbTe, and up to 215 K with PbSe active layers. On Si-substrates, maximum output was about 30 mW. There is room for considerable improvement with better adapted designs including improved heat-removal precautions.

Paper Details

Date Published: 28 February 2009
PDF: 10 pages
Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 71931G (28 February 2009); doi: 10.1117/12.816359
Show Author Affiliations
M. Rahim, ETH Zürich (Switzerland)
A. Khiar, ETH Zürich (Switzerland)
F. Felder, ETH Zürich (Switzerland)
M. Fill, ETH Zürich (Switzerland)
D. Boye, ETH Zürich (Switzerland)
H. Zogg, ETH Zürich (Switzerland)


Published in SPIE Proceedings Vol. 7193:
Solid State Lasers XVIII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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