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Proceedings Paper

Three-dimensional profile extraction from CD-SEM top-view image
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Paper Abstract

Emerging three-dimensional (3D) transistor structures have increased the demand for an easy and practical method to measure pattern feature metrics (such as CD, line-edge roughness, etc.) as a function of height (z coordinate). We have examined 3D pattern-profile extraction from a top-view image obtained using a critical-dimension scanning electron microscope (CD-SEM). An atomic force microscope (AFM) was used to measure 3D pattern profiles as a reference. In this examination, line-edge positions were firstly obtained from a CD-SEM image at various threshold levels, and the result was compared with the reference profile measured using the AFM. From this comparison, a mapping function from threshold levels of CD-SEM image-processing to z coordinates is obtained. Using this mapping function, 3D pattern profiles were reconstructed from CD-SEM signal profiles, and the obtained profiles were similar to the directly obtained cross-sectional profile. Put simply, a 3D pattern-profile was extracted from a top-view image successfully. Though the results are not sufficient to confirm the validity of our method yet, the method may feasibly be introduced for quick and easy 3D measurement.

Paper Details

Date Published: 24 March 2009
PDF: 11 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72722G (24 March 2009); doi: 10.1117/12.816208
Show Author Affiliations
Atsuko Yamaguchi, Hitachi, Ltd. (Japan)
Yoshinori Momonoi, Hitachi, Ltd. (Japan)
Ken Murayama, Hitachi Kenki FineTech Co., Ltd. (Japan)
Hiroki Kawada, Hitachi High-Technologies Corp. (Japan)
Junichi Tanaka, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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