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Proceedings Paper

KrF resists and process for implant layers at advanced nodes
Author(s): Hung-Chin Huang; Yong-Fa Huang; Steven Wu; Louis Jang; Sho-Shen Lee; George K. C. Huang; Howard Chen; Chun-Chi Yu; Tomoki Kurihara; Hitoshi Fukiya; Hiromu Yoshida; Yoshihiro Yamamoto
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Paper Abstract

The minimum design rule of device patterns for LSI implant layers has been shrinking constantly according to the industry requirements. Wavelength has been shortened and numerical aperture (NA) of the scanner has been enlarged to catch up with the required shrinkage. Implant layers are unique because the resist is nearly always used without an antireflective coating, and as a result, the resist is in direct contact with a multitude of substrate materials. In implant applications, the wafer topography sacrifices some of the lithographic performance in order to obtain adequate features on both top and bottom of the topography. KrF lithography has applied to most of the ion implant levels at today's advanced nodes. To solve the several issues in ion implant process, New KrF resist was designed specifically for the lithographic / implantation process requirements.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730M (1 April 2009); doi: 10.1117/12.816136
Show Author Affiliations
Hung-Chin Huang, United Microelectronics Corp. (Taiwan)
Yong-Fa Huang, United Microelectronics Corp. (Taiwan)
Steven Wu, United Microelectronics Corp. (Taiwan)
Louis Jang, United Microelectronics Corp. (Taiwan)
Sho-Shen Lee, United Microelectronics Corp. (Taiwan)
George K. C. Huang, United Microelectronics Corp. (Taiwan)
Howard Chen, United Microelectronics Corp. (Taiwan)
Chun-Chi Yu, United Microelectronics Corp. (Taiwan)
Tomoki Kurihara, Rohm and Haas Electronic Materials (United States)
Hitoshi Fukiya, Rohm and Haas Electronic Materials (United States)
Hiromu Yoshida, Rohm and Haas Electronic Materials (United States)
Yoshihiro Yamamoto, Rohm and Haas Electronic Materials (United States)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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