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Proceedings Paper

GaAs/AlGaAs heterojunction as a fast detector of infrared laser pulses
Author(s): Steponas Ašmontas; Jonas Gradauskas; Viktorija Kazlauskaitė; Algirdas Sužiedėlis; Edmundas Širmulis; Mindaugas Vingelis
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Paper Abstract

We present experimental study of photoresponse in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond CO2 laser pulses. This device revealed itself as a fast IR sensor operating at room temperature. Hot carrier effects are proposed to be responsible for the photoresponse formation.

Paper Details

Date Published: 2 December 2008
PDF: 6 pages
Proc. SPIE 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6), 71420N (2 December 2008); doi: 10.1117/12.815954
Show Author Affiliations
Steponas Ašmontas, Semiconductor Physics Institute (Lithuania)
Jonas Gradauskas, Semiconductor Physics Institute (Lithuania)
Viktorija Kazlauskaitė, Semiconductor Physics Institute (Lithuania)
Algirdas Sužiedėlis, Semiconductor Physics Institute (Lithuania)
Edmundas Širmulis, Semiconductor Physics Institute (Lithuania)
Mindaugas Vingelis, Semiconductor Physics Institute (Lithuania)


Published in SPIE Proceedings Vol. 7142:
Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6)
Janis Spigulis; Andris Krumins; Donats Millers; Andris Sternberg; Inta Muzikante; Andris Ozols; Maris Ozolinsh, Editor(s)

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