Share Email Print
cover

Proceedings Paper

Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems
Author(s): Chris A. Mack
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Reaction-diffusion chemical systems where the catalyst of the reaction is the only diffusing species are investigated. Here, the correlation length and Hurst roughness exponent are derived in one-, two- and three-dimensional firstorder catalytic reaction-diffusion problems. These results are relevant to many chemical systems, and in particular to chemically amplified photoresists used in semiconductor lithography, where the correlation length and Hurst exponent affect the line-edge roughness of sub-100-nm printed features.

Paper Details

Date Published: 1 April 2009
PDF: 6 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732G (1 April 2009); doi: 10.1117/12.815378
Show Author Affiliations
Chris A. Mack, Consultant (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

© SPIE. Terms of Use
Back to Top