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Proceedings Paper

Engineered quantum dot structures: fabrication and applications
Author(s): Johann Peter Reithmaier; Emil-Mihai Pavelescu; Christian Gilfert; A. Gushterov; Wolfgang Kaiser; Pia Weinmann; Martin Kamp; Alfred Forchel; Alfredo Martín-Mínguez; Ignacio Esquivias
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Paper Abstract

Quantum dot structures with tailored geometries were developed for different high power laser applications by molecular beam epitaxy based self-assembly techniques. 920 nm quantum dot laser material with new record values of 0.08 nm/K in temperature dependent wavelength shift could be obtained, which is a factor of 4 lower than for quantum well lasers. Tapered distributed Bragg reflector laser devices were processed, which exhibit single mode output powers of more than 1 W in cw with an M2 value of 2. For display applications based on frequency doubling, 1060 nm quantum dot laser material is developed with and without tunnel injection quantum well active zones. With this new type of laser material an output power of 4.5 W could be obtained on 100 μm broad area lasers. An overview is given on this recent work performed within the frame of the EU project "WWW_BRIGHTER_EU".

Paper Details

Date Published: 26 January 2009
PDF: 10 pages
Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220R (26 January 2009); doi: 10.1117/12.815359
Show Author Affiliations
Johann Peter Reithmaier, Univ. Kassel (Germany)
Emil-Mihai Pavelescu, Univ. Kassel (Germany)
Christian Gilfert, Univ. Kassel (Germany)
A. Gushterov, Univ. Kassel (Germany)
Wolfgang Kaiser, Univ. Würzburg (Germany)
Pia Weinmann, Univ. Würzburg (Germany)
Martin Kamp, Univ. Würzburg (Germany)
Alfred Forchel, Univ. Würzburg (Germany)
Alfredo Martín-Mínguez, Univ. Politécnica de Madrid (Spain)
Ignacio Esquivias, Univ. Politécnica de Madrid (Spain)

Published in SPIE Proceedings Vol. 7222:
Quantum Sensing and Nanophotonic Devices VI
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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