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Proceedings Paper

Electrical doping for high performance organic light emitting diodes
Author(s): Jang-Joo Kim; Dong-Seok Leem; Jae-Hyun Lee
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Paper Abstract

Novel p-dopants of ReO3 and CuI, and an n-dopant of Rb2CO3 have been developed. Among many other p-dopants, ReO3 possesses superior characteristics of low temperature deposition, efficient charge generation and increasing the device lifetime. The absorption intensity of charge transfer complexes and current-voltage characteristics revealed that charge generation in p-doped hole transporting layers is more effective when the work function of the dopant is larger. High performance OLEDs have been fabricated using the p- and n-dopants, including the low driving voltage p-i-n phosphorescent OLEDs, high power efficiency of tandem OLEDs using ReO3 doped NPB/ReO3 (1 nm)/Rb2CO3 doped Bphen as the interconnection unit, and top emission OLEDs using CuI doped NPB as the hole injection layer from Ag electrode.

Paper Details

Date Published: 12 February 2009
PDF: 11 pages
Proc. SPIE 7213, Organic Photonic Materials and Devices XI, 721303 (12 February 2009); doi: 10.1117/12.815261
Show Author Affiliations
Jang-Joo Kim, Seoul National Univ. (Korea, Republic of)
Dong-Seok Leem, Seoul National Univ. (Korea, Republic of)
Jae-Hyun Lee, Seoul National Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7213:
Organic Photonic Materials and Devices XI
Robert L. Nelson; François Kajzar; Toshikuni Kaino, Editor(s)

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