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Proceedings Paper

A study of the photo acid generator material design for chemically amplified photoresists
Author(s): Y. Utsumi; T. Seshimo; Y. Komuro; A. Kawaue; K. Ishiduka; K. Matsuzawa; Hideo Hada; J. Onodera
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Paper Abstract

In current optical lithography, resolution is required to reach for 45 nm half-pitch and a chemically amplified resist (CAR) is used for a wide variety of applications. For ArF lithography beyond the 45 nm half-pitch, it is important to control pattern quality. The molecular design of a photo acid generator (PAG) is very important in the study to control not only acid strength but also acid diffusion length. Various novel PAGs that have different characteristics were synthesized for resist performance improvement. Acid molecular size was determined by molecular orbital (MO) calculation, and the acid diffusion coefficients (D) of these PAGs were evaluated by a bilayer method. As a result, it was found that acid diffusion coefficient (D) could not be controlled simply by adjusting anion molecular size. It may be presumed that the molecular interaction between acid generated by the exposure and polymer matrix areas is one of the most important key factors for controlling acid diffusion.

Paper Details

Date Published: 1 April 2009
PDF: 9 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732F (1 April 2009); doi: 10.1117/12.815190
Show Author Affiliations
Y. Utsumi, Tokyo Ohka Kogyo Co., Ltd. (Japan)
T. Seshimo, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Y. Komuro, Tokyo Ohka Kogyo Co., Ltd. (Japan)
A. Kawaue, Tokyo Ohka Kogyo Co., Ltd. (Japan)
K. Ishiduka, Tokyo Ohka Kogyo Co., Ltd. (Japan)
K. Matsuzawa, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hideo Hada, Tokyo Ohka Kogyo Co., Ltd. (Japan)
J. Onodera, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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