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Proceedings Paper

Decomposition analysis of molecular resists to further CD control
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Paper Abstract

We have designed and synthesized molecular resist material, which has just only two part protecting groups in one molecule (Prot-Mad-2). The resist can resolve below 30 nm hp pattern. We analyzed decomposition reaction using Prot-Mad-2 at the un-exposed and exposed area quantitatively by taking advantage of its property of high purity and simple structure. From the HPLC results, it was found that main decomposition reaction was deprotection of Prot-Mad-2. The ratio of one part de-protected material (Deprot-1-prot-Mad-1) and fully de-protected material (Deprot-2) changed with exposure dose. It was found that exposure dose of surface roughness maximum coincided with the exposure dose where materials of two-part protection, one part de-protection and fully de-protection existed equally in the resist film. Furthermore, dissolution rates of Prot-Mad-2, Deprot-1-prot-Mad-1 and Deprot-2 were totally different. It is considered that surface roughness was generated by different dissolution rates in the presence of Prot-Mad-2, Deprot-1-prot-Mad-1 and Deprot-2. Our result suggests that reducing a variety of dissolution rates at exposed and un-exposed boundary is a key to improve line edge roughness (LER).

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727330 (1 April 2009); doi: 10.1117/12.815173
Show Author Affiliations
Daiju Shiono, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hideo Hada, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Taku Hirayama, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Junichi Onodera, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Takeo Watanabe, Univ. of Hyogo (Japan)
Hiroo Kinoshita, Univ. of Hyogo (Japan)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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