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Proceedings Paper

Calibrating OPC model with full CD profile data for 2D and 3D patterns using scatterometry
Author(s): Aasutosh D. Dave; Oleg Kritsun; Yunfei Deng; Kenji Yoshimoto; Jie Li; Jiangtao Hu
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Paper Abstract

The ability to manage critical dimensions (CDs) of structures on IC devices is vital to improving product yield and performance. It is challenging to achieve accurate metrology data as the geometries shrink beyond 40 nm features. At this technology node CDSEM noise and resist LER are of significant concerns1. This paper examines the extendibility of scatterometry techniques to characterize structures that are close to limits of lithographic printing and to extract full profile information for 2D and 3D features for OPC model calibration2. The resist LER concerns are diminished because of the automatic averaging that scatterometry provides over the measurement pad; this represents a significant added value for proper OPC model calibration and verification. This work develops a comparison matrix to determine the impact of scatterometry data on OPC model calibration with conventional CDSEM measurements. The paper will report test results for the OPC model through process data for accuracy and predictability.

Paper Details

Date Published: 16 March 2009
PDF: 9 pages
Proc. SPIE 7274, Optical Microlithography XXII, 727415 (16 March 2009); doi: 10.1117/12.814955
Show Author Affiliations
Aasutosh D. Dave, Mentor Graphics Corp. (United States)
Oleg Kritsun, GLOBALFOUNDRIES (United States)
Yunfei Deng, GLOBALFOUNDRIES (United States)
Kenji Yoshimoto, GLOBALFOUNDRIES (United States)
Jie Li, Nanometrics, Inc. (United States)
Jiangtao Hu, Nanometrics, Inc. (United States)


Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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