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Proceedings Paper

Measurement of surface resistivity/conductivity of Si waver by optical interferometry techniques
Author(s): K. Habib; S. Habib
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Paper Abstract

Optical interferometry techniques can be use for the first time to measure the surface resistivity/conductivity of silicon wavers without any physical contact. This can be achieved by applying an electrical potential across the waver and measuring the electronic current flow across the waver as a result of the electrical potential. In the mean time, optical iterferometry techniques such as holographic interferometry can be used in situ to measure the orthogonal surface displacement of the waver, as a result of the applied electrical potential. In addition, a mathematical model can be derived in order to correlate the ratio of the electrical potential to the electronic current flow (electrical potential/electronic Current flow=resistance) and to the surface (orthogonal) displacement of the waver. In other words, a proportionality constant (surface resistivity or conductivity=1/ surface resistivity) between the measured electrical resistance and the surface displacement (by the optical interferometry techniques) can be obtained. Consequently the surface resistivity/ and conductivity of the waver can be determined, without any physical contact.

Paper Details

Date Published: 9 April 2009
PDF: 7 pages
Proc. SPIE 7294, Nondestructive Characterization for Composite Materials, Aerospace Engineering, Civil Infrastructure, and Homeland Security 2009, 729417 (9 April 2009); doi: 10.1117/12.814869
Show Author Affiliations
K. Habib, Kuwait Institute for Scientific Research (Kuwait)
S. Habib, Kuwait Univ. (Kuwait)


Published in SPIE Proceedings Vol. 7294:
Nondestructive Characterization for Composite Materials, Aerospace Engineering, Civil Infrastructure, and Homeland Security 2009
H. Felix Wu; Aaron A. Diaz; Peter J. Shull; Dietmar W. Vogel, Editor(s)

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