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Proceedings Paper

Track optimization and control for 32nm node double patterning and beyond
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Paper Abstract

Given the increasingly stringent CD requirements for double patterning at the 32nm node and beyond the question arises as to how best to correct for CD non-uniformity at litho and etch. For example, is it best to apply a dose correction over the wafer while keeping the PEB plate as uniform as possible, or should the dose be kept constant and PEB CD tuning used to correct. In this work we present experimental data, obtained on a state of the art ASML XT:1900Gi and Sokudo RF3S cluster, on both of these approaches, as well as on a combined approach utilizing both PEB CD tuning and dose correction.

Paper Details

Date Published: 23 March 2009
PDF: 6 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727236 (23 March 2009); doi: 10.1117/12.814849
Show Author Affiliations
David Laidler, IMEC (Belgium)
Craig Rosslee, SOKUDO Co., Ltd. (United States)
Koen D'havé, IMEC (Belgium)
Philippe Leray, IMEC (Belgium)
Len Tedeschi, SOKUDO Co., Ltd. (United States)

Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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