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The effects of post-annealing on pulse laser deposition of Zr0.8Sn0.2TiO4 thin film on Si(100)
Author(s): C. T. Chuang; Ming Chang Shih; M. H. Weng
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Paper Abstract

We demonstrate the pulse laser deposition (PLD) of zirconium tin titanium oxide (Zr0.8,Sn0.2)TiO4 (ZST) thin film on p-type Si (100)substrate by KrF excimer laser at room temperature, and the study of the effects of post-annealing to the optical and dielectric properties of the deposited ZST thin films. Deposition rate of ZST thin film at 0.3 Angstrom/pulse has been achieved with laser fluences of 1500 mJ/cm2. Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM) are used to study the effect of the crystalline properties of the deposited films on process parameters; such as laser fluence and annealing temperature. In addition, UV-Vis spectroscopy is used to characterize the optical properties of the deposited ZST films.

Paper Details

Date Published: 3 October 2008
PDF: 9 pages
Proc. SPIE 7155, Ninth International Symposium on Laser Metrology, 71552D (3 October 2008); doi: 10.1117/12.814587
Show Author Affiliations
C. T. Chuang, National Univ. of Kaohsiung (Taiwan)
Ming Chang Shih, National Univ. of Kaohsiung (Taiwan)
M. H. Weng, National Nano Device Lab. (Taiwan)

Published in SPIE Proceedings Vol. 7155:
Ninth International Symposium on Laser Metrology
Chenggen Quan; Anand Asundi, Editor(s)

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