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Proceedings Paper

Single photon sources using InAs/InP quantum dots
Author(s): R. Hostein; N. Gogneau; A. Michon; L. Le Gratiet; E. Cambril; G. Beaudoin; G. Patriarche; I. Robert-Phillip; J. Y. Marzin; A. Beveratos; I. Sagnes
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Paper Abstract

Single photon sources are of extreme interest for future quantum communications networks. Several realizations of such sources where proposed but none of them corresponds to the needs of a quantum network, in terms of emission wavelength, repetition rate or quantum state purity. Using self organized InAs/InP quantum dots, it is possible to tune the emission wavelength up to 1.55 μm. Lifetime measurements confirm the high optical quality of these dots opening the possibility to engineer sources operate above 77K. With this material combination it is also possible to localized the growth of a single quantum dot, that can be to deterministically coupled to a photonic crystal cavity.

Paper Details

Date Published: 26 January 2009
PDF: 8 pages
Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72221I (26 January 2009); doi: 10.1117/12.814487
Show Author Affiliations
R. Hostein, Lab. of Photonics and Nanostructures, CNRS (France)
N. Gogneau, Lab. of Photonics and Nanostructures, CNRS (France)
A. Michon, Lab. of Photonics and Nanostructures, CNRS (France)
L. Le Gratiet, Lab. of Photonics and Nanostructures, CNRS (France)
E. Cambril, Lab. of Photonics and Nanostructures, CNRS (France)
G. Beaudoin, Lab. of Photonics and Nanostructures, CNRS (France)
G. Patriarche, Lab. of Photonics and Nanostructures, CNRS (France)
I. Robert-Phillip, Lab. of Photonics and Nanostructures, CNRS (France)
J. Y. Marzin, Lab. of Photonics and Nanostructures, CNRS (France)
A. Beveratos, Lab. of Photonics and Nanostructures, CNRS (France)
I. Sagnes, Lab. of Photonics and Nanostructures, CNRS (France)


Published in SPIE Proceedings Vol. 7222:
Quantum Sensing and Nanophotonic Devices VI
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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