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Proceedings Paper

Advanced immersion contact hole patterning for sub 40nm memory applications: a fundamental resist study
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Paper Abstract

In this paper we investigate fundamental resist properties to enhance resolution and focus margin for immersion contact hole patterning. Basic chemistry factors have been used to manipulate the iso-focal region (the region of smallest critical dimension variation through focus) of the photoresist and study the impact on resolution and focus margin for small isolated contact holes. Acid diffusion length is one of the key factors investigated, which can be controlled by polymer, PAG, quencher, bake temperature and bake time. The various criteria investigated for this study were: focus and exposure latitude for dense L/S, dense C/H and semi-dense C/H. The effect of manipulating the acid diffusion of the photoresist on imaging small contact holes was verified using ultra-high NA immersion imaging at 1.35 NA.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727339 (1 April 2009); doi: 10.1117/12.814483
Show Author Affiliations
Yun-Kyeong Jang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jin-Young Yoon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Shi-Yong Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kwang-Sub Yoon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seok-Hwan Oh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seong-Woon Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Woo-Sung Han, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seokho Kang, Rohm and Haas Electronic Materials (United States)
Thomas Penniman, Rohm and Haas Electronic Materials (United States)
Duk-Soo Kim, Rohm and Haas Electronic Materials (United States)
Dong Won Chung, Rohm and Haas Electronic Materials (United States)
Sung-Seo Cho, Rohm and Haas Electronic Materials (United States)
Cheng Bai Xu, Rohm and Haas Electronic Materials (United States)
George G. Barclay, Rohm and Haas Electronic Materials (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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