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Proceedings Paper

Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools
Author(s): Thomas I. Wallow; Bill Pierson; Hiroyuki Mizuno; Anita Fumar-Pici; Karen Petrillo; Chris N. Anderson; Patrick P. Naulleau; Steven G. Hansen; Yunfei Deng; Koen van Ingen Schenau; Chiew-Seng Koay; Linda Ohara; Sang-In Han; Robert Watso; Lior Huli; Martin Burkhardt; Obert Wood; Joerg Mallmann; Bart Kessels; Robert Routh; Kevin Cummings
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Paper Abstract

We describe progress in implementation of blur-based resolution metrics for EUV photoresists. Three sets of blur metrics were evaluated as exposure-tool independent comparison methods using the Sematech-LBNL EUV microexposure tool (MET) and ASML α-Demo Tool (ADT) full-field EUV scanner. For the two EUV resists studied here, deprotection blurs of 15 nm are consistently measured using blur estimation methods based on corner rounding, contact hole exposure latitude, and process window fitting using chemical amplification lumped parameter models. Agreement between methods and exposure tools appears excellent. For both resists, SRAM-type lithographic diagnostic patterns at 80 nm pitch are only modestly sensitive to OPC blur compensation and display robust printability (RELS ~ ILS near 50 μm-1 for multiple trench geometries) on the ASML ADT. These findings confirm the continuing utility of blur-based metrics in a) guiding resist selection for use in EUV process development and integration at the 22 nm logic node and below, and b) providing an exposure-tool independent set of metrics for assessing progress in EUV resist development.

Paper Details

Date Published: 1 April 2009
PDF: 11 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72733T (1 April 2009); doi: 10.1117/12.814457
Show Author Affiliations
Thomas I. Wallow, GlobalFoundries (United States)
Bill Pierson, ASML (United States)
Hiroyuki Mizuno, Toshiba America Electronic Components, Inc. (United States)
Anita Fumar-Pici, ASML (United States)
Karen Petrillo, IBM Corp. (United States)
Chris N. Anderson, Univ. of California, Berkeley (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Steven G. Hansen, ASML (United States)
Yunfei Deng, GlobalFoundries (United States)
Koen van Ingen Schenau, ASML (Netherlands)
Chiew-Seng Koay, IBM Corp. (United States)
Linda Ohara, ASML (United States)
Sang-In Han, ASML (United States)
Robert Watso, ASML (United States)
Lior Huli, Univ. at Albany (United States)
Martin Burkhardt, IBM Corp. (United States)
Obert Wood, GlobalFoundries (United States)
Joerg Mallmann, ASML (Netherlands)
Bart Kessels, ASML (Netherlands)
Robert Routh, ASML (United States)
Kevin Cummings, ASML (United States)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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