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Proceedings Paper

Analysis of molecular resist distribution in a resist film by using x-ray reflectivity
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Paper Abstract

To obtain high resolution and sensitivity and low line width roughness (LWR), the resist film homogeneity is thought to be the key requirement of extreme ultraviolet lithography (EUVL) resist materials. We have synthesized of a new class of chemically amplified molecular glass resists containing rigid triphenolic cores which are protected by flexible side chains. We analyzed the electron density distribution of resist films (70 nm) by using X-ray reflectivity (XRR). The effects of protection ratio, high and low activation protecting groups, chain lengths have been tested using selected molecular resist. We discuss the effects of the chemical structures of new molecular resists on EUV lithographic performances.

Paper Details

Date Published: 1 April 2009
PDF: 7 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732W (1 April 2009); doi: 10.1117/12.814449
Show Author Affiliations
Jeongsik Kim, Dongjin Semichem Co. Ltd. (Korea, Republic of)
Jae-Woo Lee, Dongjin Semichem Co. Ltd. (Korea, Republic of)
Deogbae Kim, Dongjin Semichem Co. Ltd. (Korea, Republic of)
Jaehyun Kim, Dongjin Semichem Co. Ltd. (Korea, Republic of)
Sung-Il Ahn, Pohang Univ. of Science and Technology (Korea, Republic of)
Wang-Cheol Zin, Pohang Univ. of Science and Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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