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Proceedings Paper

Implementing self-aligned double patterning on non-gridded design layouts
Author(s): Huixiong Dai; Jason Sweis; Chris Bencher; Yongmei Chen; Jen Shu; Xumou Xu; Chris Ngai; Judy Huckabay; Milind Weling
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Paper Abstract

The Sidewall Spacer Double Patterning (SSDP) technique, also referred to as Self-Aligned Double Patterning (SADP), has been adopted as the primary double patterning solution for 32nm technology nodes and below for flash memory manufacturing. Many are now looking to migrate the technique to DRAM and random Logic layers. However, DRAM and especially Logic have far more complex layout requirements than NAND-FLASH, requiring a more sophisticated use of the SSDP technique. To handle the additional complexities an automated electronic design tool was used to calculate optimal layout splits of a design target into 2 or 3 masks. The model was programmed with immersion lithography and dry-193nm lithography MRC input rules and on wafer performance was tested. We discuss the patterning needs from the trim-mask and the pad-mask and associated lithography process window requirements and alignment accuracies necessary to pursue 32nm and 22nm half-pitch designs.

Paper Details

Date Published: 12 March 2009
PDF: 11 pages
Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 72751E (12 March 2009); doi: 10.1117/12.814423
Show Author Affiliations
Huixiong Dai, Applied Materials, Inc. (United States)
Jason Sweis, Cadence Design Systems, Inc. (United States)
Chris Bencher, Applied Materials, Inc. (United States)
Yongmei Chen, Applied Materials, Inc. (United States)
Jen Shu, Applied Materials, Inc. (United States)
Xumou Xu, Applied Materials, Inc. (United States)
Chris Ngai, Applied Materials, Inc. (United States)
Judy Huckabay, Cadence Design Systems, Inc. (United States)
Milind Weling, Cadence Design Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 7275:
Design for Manufacturability through Design-Process Integration III
Vivek K. Singh; Michael L. Rieger, Editor(s)

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