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Proceedings Paper

Progress towards production worthy developable BARCs (DBARCs)
Author(s): James Cameron; John Amara; Gregory Prokopowicz; Jin Wuk Sung; David Valeri; Adam Ware; Kevin O'Shea; Yoshihiro Yamamoto; Tomoki Kurihara; Libor Vyklicky; Wu-Song Huang; Irene Popova; Pushkara Rao Varanasi
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Paper Abstract

Developable bottom anti-reflective coating (DBARC) technology holds promise in two main areas of lithography. The first application of DBARC is in implant lithography where patterning implant levels would greatly benefit from improved reflection control such as provided by a conventional BARC. However, implant layers cannot withstand BARC open etch thereby making DBARC an attractive solution as the resist and DBARC are simultaneously dissolved during the development step leaving the underlying substrate ready for implantation. In comparison to current implant processes with top anti-reflective coatings (TARC), DBARCs are anticipated to offer improvements in reflection control which would translate to improved CDU and increased process window for both KrF and ArF implants. Indeed, this area has long been considered the ideal insertion point for DBARC technology. The second area where DBARC technology can make a significant impact is in non-implant lithography. In this large segment, the ability to replace a conventional BARC with a DBARC affords the device maker the ability to simplify both lithographic and integration processes. By replacing the BARC with a DBARC, the BARC open etch is negated. Furthermore, by applying this strategy on multilayer stacks it is possible to greatly simplify the process by avoiding both CVD steps and pattern transfer steps thereby easing integration. In this area, DBARC technology could have merit for low k1 KrF and ArF (dry) lithography as well as in immersion ArF processes. This paper describes our results in designing production worthy DBARCs for both implant and non-implant applications. A newly developed KrF DBARC platform is evaluated for logic implant applications and compared to a standard TARC implant process. Post develop residue and defectivity are checked for the new platform and the results compared to production worthy BARC and implant resists. A new ArF platform was also developed and initial lithographic results are reported for an implant application. Several non-implant applications were also investigated and results are reported for high resolution KrF and ArF (dry) lithography as well as an immersion ArF process.

Paper Details

Date Published: 1 April 2009
PDF: 13 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72733L (1 April 2009); doi: 10.1117/12.814421
Show Author Affiliations
James Cameron, Rohm and Haas Electronic Materials LLC (United States)
John Amara, Rohm and Haas Electronic Materials LLC (United States)
Gregory Prokopowicz, Rohm and Haas Electronic Materials LLC (United States)
Jin Wuk Sung, Rohm and Haas Electronic Materials LLC (United States)
David Valeri, Rohm and Haas Electronic Materials LLC (United States)
Adam Ware, Rohm and Haas Electronic Materials LLC (United States)
Kevin O'Shea, Rohm and Haas Electronic Materials LLC (United States)
Yoshihiro Yamamoto, Rohm and Haas Electronic Materials K.K. (Japan)
Tomoki Kurihara, Rohm and Haas Electronic Materials K.K. (Japan)
Libor Vyklicky, IBM Corp. (United States)
Wu-Song Huang, IBM Corp. (United States)
Irene Popova, IBM Corp. (United States)
Pushkara Rao Varanasi, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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