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Proceedings Paper

Performance of an ArF siloxane BARC exposed to a 172-nm UV cure for double patterning applications
Author(s): Ze-Yu Wu; Joseph Kennedy; Song-Yuan Xie; Ron Katsanes; Kyle Flanigan; Junyan Dai; Nikolaos Bekiaris; Hiram Cervera; Glen Mori; Thomas Wallow
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Paper Abstract

As IC manufactures explore different paths to meet the resolution requirements for next generation technology, patterning schemes which utilize a double photoresist patterning process are under extensive evaluation. One dual patterning process under consideration uses a 172nm UV cure to render the first photoresist pattern insoluble to the casting solvents and developer chemistries used to define the second photoresist pattern. In this work we investigate the change in the material properties such as thickness, optical, bond structure, adhesion and stability of the SiBARC film due to the UV cure. Simulations are included to assess the change in substrate reflectance due to the change in the optical properties of the SiBARC film as a result of the UV cure. Single patterned photoresist line space features versus UV cure dose of the SiBARC - under layer film stack is presented. This is followed by cross-grid and pitch-split double patterning using 172 nm UV light of varying dose to freeze the first photoresist layer patterned using a tri-layer film configuration.

Paper Details

Date Published: 1 April 2009
PDF: 12 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731I (1 April 2009); doi: 10.1117/12.814416
Show Author Affiliations
Ze-Yu Wu, Honeywell Electronic Materials (United States)
Joseph Kennedy, Honeywell Electronic Materials (United States)
Song-Yuan Xie, Honeywell Electronic Materials (United States)
Ron Katsanes, Honeywell Electronic Materials (United States)
Kyle Flanigan, Honeywell Electronic Materials (United States)
Junyan Dai, SOKUDO Co., Ltd. (United States)
Nikolaos Bekiaris, SOKUDO Co., Ltd. (United States)
Hiram Cervera, SOKUDO Co., Ltd. (United States)
Glen Mori, SOKUDO Co., Ltd. (United States)
Thomas Wallow, Advanced Micro Devices, Inc./The Foundry Co. (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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