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Proceedings Paper

Exploration of linear and non-linear double exposure techniques by simulation
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Paper Abstract

In this work, a framework for the assessment of different double exposure techniques is laid out. Both the simulation environment and the utilized models, derived from well-established resist models, are discussed. Numerous simulation results are evaluated to investigate strengths and weaknesses of different double exposure approaches. Non-linear superposition techniques are examined in respect of their process performance for both standard and sub 0.25 k1 values. In addition to a study of these effects in the scope of basic layouts, an application to interference-assisted lithography (IAL) is proposed and discussed.

Paper Details

Date Published: 16 March 2009
PDF: 13 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72741V (16 March 2009); doi: 10.1117/12.814411
Show Author Affiliations
John S. Petersen, Petersen Advanced Lithography, Inc. (United States)
Robert T. Greenway, Petersen Advanced Lithography, Inc. (United States)
Tim Fühner, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Peter Evanschitzky, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Feng Shao, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Andreas Erdmann, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)


Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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