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Proceedings Paper

Double-exposure materials for pitch division with 193nm lithography: requirements, results
Author(s): Robert Bristol; David Shykind; Sungwon Kim; Yan Borodovsky; Evan Schwartz; Courtney Turner; Georgeta Masson; Ke Min; Katherine Esswein; James M. Blackwell; Nikolay Suetin
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Paper Abstract

We present the results of both theoretical and experimental investigations of materials for application either as a reversible Contrast Enhancement Layer (rCEL) or a Two-Stage PAG. The purpose of these materials is to enable Litho- Litho-Etch (LLE) patterning for Pitch Division (PD) at the 16nm logic node (2013 Manufacturing). For the rCEL, we find from modeling using an E-M solver that such a material must posses a bleaching capability equivalent to a Dill A parameter of greater than 100. This is at least a factor of ten greater than that achieved so far at 193nm by any usable organic material we have tested. In the case of the Two-Stage PAG, analytical and lithographic modeling yields a usable material process window, in terms of reversibility and two-photon vs. one-photon acid production rates (branching ratio). One class of materials, based on the cycloadduct of a tethered pair of anthracenes, has shown promise under testing at 193nm in acetonitrile. Sufficient reversibility without acid production, enabled by near-UV exposure, has been achieved. Acid production as a function of dose shows a clear quadratic component, consistent with a branching ratio greater than 1. The experimental data also supports a acid contrast value of approximately 0.05 that could in principle be obtained with this molecule under a pitch division double-exposure scenario.

Paper Details

Date Published: 1 April 2009
PDF: 12 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727307 (1 April 2009); doi: 10.1117/12.814352
Show Author Affiliations
Robert Bristol, Intel Corp. (United States)
David Shykind, Intel Corp. (United States)
Sungwon Kim, Intel Corp. (United States)
Yan Borodovsky, Intel Corp. (United States)
Evan Schwartz, Intel Corp. (United States)
Courtney Turner, Intel Corp. (United States)
Georgeta Masson, Intel Corp., LBNL Molecular Foundry (United States)
Ke Min, Intel Corp., LBNL Molecular Foundry (United States)
Katherine Esswein, Intel Corp., LBNL Molecular Foundry (United States)
James M. Blackwell, Intel Corp., LBNL Molecular Foundry (United States)
Nikolay Suetin, Intel Corp. (Russian Federation)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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