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Proceedings Paper

Inverse vs. traditional OPC for the 22nm node
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Paper Abstract

The 22nm node will be patterned with very challenging Resolution Enhancement Techniques (RETs) such as double exposure or double patterning. Even with those extreme RETs, the k1 factor is expected to be less than 0.3. There is some concern in the industry that traditional edge-based simulate-then-move Optical Proximity Correction (OPC) may not be up to the challenges expected at the 22nm node. Previous work presented the advantages of a so-called inverse OPC approach when coupled with extreme RETs or illumination schemes. The smooth mask contours resulting from inverse corrections were shown not to be limited by topological identity, feedback locality, or fragment conformity. In short, inverse OPC can produce practically unconstrained and often non-intuitive mask shapes. The authors will expand this comparison between traditional and inverse OPC to include likely 22nm RETs such as double dipole lithography and double patterning, comparing dimensional control through process window for each OPC method. The impact of mask simplification of the inverse OPC shapes into shapes which can be reliably manufactured will also be explored.

Paper Details

Date Published: 16 March 2009
PDF: 12 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72743A (16 March 2009); doi: 10.1117/12.814339
Show Author Affiliations
James Word, Mentor Graphics Corp. (United States)
Yuri Granik, Mentor Graphics Corp. (United States)
Marina Medvedeva, Mentor Graphics Corp. (United States)
Sergei Rodin, Mentor Graphics Corp. (United States)
Luigi Capodieci, Advanced Micro Devices (United States)
Yunfei Deng, Advanced Micro Devices (United States)
Jongwook Kye, Advanced Micro Devices (United States)
Cyrus Tabery, Advanced Micro Devices (United States)
Kenji Yoshimoto, Advanced Micro Devices (United States)
Yi Zou, Advanced Micro Devices (United States)
Hesham Diab, Mentor Graphics Corp. (Egypt)
Mohamed Gheith, Mentor Graphics Corp. (United States)
Mohamed Habib, Mentor Graphics Corp. (Egypt)
Cynthia Zhu, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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