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Proceedings Paper

OPC for reduced process sensitivity in the double patterning flow
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Paper Abstract

The pitch-splitting of patterns using the litho-etch-litho-etch double patterning technique (DPT) may be required at the 22nm node. By splitting the layout into 2 masks, DPT introduces some new potential failure mechanisms. These new failure mechanisms can occur if the layer decomposition and subsequent OPC fail to account for interlayer misalignment and corner rounding of the decomposed masks. This paper will suggest novel solutions which can be taken during the OPC step to account of interlayer misalignment and corner rounding at decomposed edges. These methods will be shown to produce improved process window and reduced sensitivity to misalignment compared to a conventional OPC without interlayer awareness.

Paper Details

Date Published: 16 March 2009
PDF: 12 pages
Proc. SPIE 7274, Optical Microlithography XXII, 727419 (16 March 2009); doi: 10.1117/12.814337
Show Author Affiliations
Mohamed Gheith, Mentor Graphics Corp. (United States)
Le Hong, Mentor Graphics Corp. (United States)
James Word, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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