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Proceedings Paper

Lithographic evaluation and chemical modeling of acid amplifiers used in EUV photoresists
Author(s): Robert Brainard; Craig Higgins; Seth Kruger; Srividya Revuru; Brian Cardineau; Sarah Gibbons; Dan Freedman; Harun Solak; Wang Yueh; Todd Younkin
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Paper Abstract

This paper describes the lithographic properties of fifteen acid amplifiers (AAs) and the chemical modeling approach used to predict their thermal stability in an ESCAP polymer resist system at 70 and 110 °C. Specifically, we show how added AAs affect the sensitivity (Eo and Esize), resolution, line edge roughness (LER), exposure latitude, and Z-parameter of ESCAP resists. We find that acid amplifiers that generate fluorinated sulfonic acids give the best combination of sensitivity, LER, and exposure latitude. Additionally, we show that these compounds are not photochemically active. Combining thermodynamic and kinetic modeling has allowed us to predict the relative enthalpies of activation for catalyzed and uncatalyzed decomposition pathways and compare the results to experimental thermal stability tests.

Paper Details

Date Published: 1 April 2009
PDF: 10 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72733Q (1 April 2009); doi: 10.1117/12.814308
Show Author Affiliations
Robert Brainard, Univ. at Albany (United States)
Craig Higgins, Univ. at Albany (United States)
Seth Kruger, Univ. at Albany (United States)
Srividya Revuru, Univ. at Albany (United States)
Brian Cardineau, Univ. at Albany (United States)
Sarah Gibbons, State Univ. of New York at New Paltz (United States)
Dan Freedman, State Univ. of New York at New Paltz (United States)
Harun Solak, Paul Scherrer Institute (Switzerland)
Wang Yueh, Intel Corp. (United States)
Todd Younkin, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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