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Proceedings Paper

Fundamental study of optical threshold layer approach towards double exposure lithography
Author(s): Xinyu Gu; Adam J. Berro; Younjin Cho; Kane Jen; Saul Lee; Tomoki Ngai; Toshiyuki Ogata; William J. Durand; Arunkumar Sundaresan; Jeffrey R. Lancaster; Steffen Jockusch; Paul Zimmerman; Nicholas J. Turro; C. Grant Willson
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Paper Abstract

193 immersion lithography has reached its maximal achievable resolution. There are mainly two lithographic strategies that will enable continued increase in resolution. Those are being pursued in parallel. The first is extreme ultraviolet (EUV) lithography and the second is double patterning (exposure) lithography. EUV lithography is counted on to be available in 2013 time frame for 22 nm node. Unfortunately, this technology has suffered several delays due to fundamental problems with source power, mask infrastructure, metrology and overall reliability. The implementation of EUV lithography in the next five years is unlikely due to economic factors. Double patterning lithography (DPL) is a technology that has been implemented by the industry and has already shown the proof of concept for the 22nm node. This technique while expensive is the only current path forward for scaling with no fundamental showstoppers for the 32nm and 22nm nodes. Double exposure lithography (DEL) is being proposed as a cost mitigating approach to advanced lithography. Compared to DPL, DEL offers advantages in overlay and process time, thus reducing the cost-of-ownership (CoO). However, DEL requires new materials that have a non-linear photoresponse. So far, several approaches were proposed for double exposure lithography, from which Optical Threshold Layer (OTL) was found to give the best lithography performance according to the results of the simulation. This paper details the principle of the OTL approach. A photochromic polymer was designed and synthesized. The feasibility of the material for application of DEL was explored by a series of evaluations.

Paper Details

Date Published: 1 April 2009
PDF: 11 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731C (1 April 2009); doi: 10.1117/12.814298
Show Author Affiliations
Xinyu Gu, The Univ. of Texas at Austin (United States)
Adam J. Berro, The Univ. of Texas at Austin (United States)
Younjin Cho, The Univ. of Texas at Austin (United States)
Kane Jen, The Univ. of Texas at Austin (United States)
Saul Lee, The Univ. of Texas at Austin (United States)
Tomoki Ngai, The Univ. of Texas at Austin (United States)
Toshiyuki Ogata, The Univ. of Texas at Austin (United States)
William J. Durand, The Univ. of Texas at Austin (United States)
Arunkumar Sundaresan, Columbia Univ. (United States)
Jeffrey R. Lancaster, Columbia Univ. (United States)
Steffen Jockusch, Columbia Univ. (United States)
Paul Zimmerman, Intel Corp. assignee to SEMATECH Inc. (United States)
Nicholas J. Turro, Columbia Univ. (United States)
C. Grant Willson, The Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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