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Proceedings Paper

C-quad polarized illumination for back end thin wire: moving beyond annular illumination regime
Author(s): Sohan Singh Mehta; Hyung-Rae Lee; Bassem Hamieh; Chidam Kallingal; Itty Matthew; Ramya Viswanathan; Derren N. Dunn
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Paper Abstract

The objective of this work is to describe the advances in the use of C-Quad polarized illumination for densest pitches in back end of line thin wire in 32m technology and outlook for 28 nm technology with NA of 1.35 on a 193nm wavelength scanner. Through simulation and experiments, we found that moving from Annular to C-Quad illumination provides improvement in intensity and contrast. We studied the patterning performance of C-Quad illumination for 1D dense, semi dense, isolated features with and without polarization. Polarization shows great improvement in contrast and line edge roughness for dense pattern. Patterning performance of isolated and semi-isolated features was the same with and without polarization.

Paper Details

Date Published: 16 March 2009
PDF: 8 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72742Y (16 March 2009); doi: 10.1117/12.814296
Show Author Affiliations
Sohan Singh Mehta, Chartered Semiconductor Manufacturing, Ltd. (United States)
Hyung-Rae Lee, SAMSUNG Electronics Co., Ltd. (United States)
Bassem Hamieh, STMicroelectronics N.V. (United States)
Chidam Kallingal, Advanced Micro Devices, Inc. (United States)
Itty Matthew, Advanced Micro Devices, Inc. (United States)
Ramya Viswanathan, IBM Semiconductor Research and Development Ctr. (United States)
Derren N. Dunn, IBM Semiconductor Research and Development Ctr. (United States)


Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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