Share Email Print
cover

Proceedings Paper

Reducing LER using a grazing incidence ion beam
Author(s): C. R. M. Struck; R. Raju; M. J Neumann; D. N. Ruzic
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

As semiconductor feature sizes and pitches shrink to ever-decreasing dimensions, Line Edge Roughness (LER) becomes and increasing important problem. The LER is transferred from the photoresist to the substrate through the subsequent processing steps, causing variations in, eg, gate length. This leads to mismatch in device performance and leakage. Thus, an efficient and cost effective way to reduce the LER in the semiconductor photoresist is needed in order to keep the imperfections from affecting processing steps further down the line. At the CPMI a new technique to reduce LER from patterened photoresist has been developed in conjunction with INTEL. Results obtained using our technique showed significant LER reduction from 6.9±0.47 nm to 3.9±0.61 nm for 45 nm lines and spaces. Recent results on 40 nm lines and spaces showed significant LER reduction from 5.9±0.50 nm to 4.1±0.63nm. LER reduction results on 40 nm lines and spaces reveal the fact that our technique is superior to other available techniques such as etching, vapor smoothing, hardbake, ozonation and rinse.

Paper Details

Date Published: 1 April 2009
PDF: 10 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727346 (1 April 2009); doi: 10.1117/12.814263
Show Author Affiliations
C. R. M. Struck, Univ. of Illinois at Urbana-Champaign (United States)
R. Raju, Univ. of Illinois at Urbana-Champaign (United States)
M. J Neumann, Univ. of Illinois at Urbana-Champaign (United States)
D. N. Ruzic, Univ. of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

© SPIE. Terms of Use
Back to Top