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Proceedings Paper

Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects
Author(s): Karen Petrillo; Dave Horak; Susan Fan; Erin McLellan; Matt Colburn; Andrew Metz; Shannon Dunn; Dave Hetzer; Jason Cantone; Kenichi Ueda; Tom Winter; Vaidyanathan Balasubramaniam; Cherry Tang; Mark Slezak
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Paper Abstract

Spin-on chemical shrink, reactive ion etch [RIE] shrink and litho-etch-litho-etch [LELE] double patterning have been utilized to produce dense 90 nm pitch, 26 nm bottom CD contacts starting from 65 nm CD, 126 nm diagonal pitch as printed features. Demonstrated lithographic process window, post etch pattern fidelity, CD, and CD uniformity are all suitable to production. In addition, electrical test results shows a comparable defect a ratio vs. a no chemical shrink baseline.

Paper Details

Date Published: 1 April 2009
PDF: 7 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731A (1 April 2009); doi: 10.1117/12.814260
Show Author Affiliations
Karen Petrillo, IBM Corp. (United States)
Dave Horak, IBM Corp. (United States)
Susan Fan, IBM Corp. (United States)
Erin McLellan, IBM Corp. (United States)
Matt Colburn, IBM Corp. (United States)
Andrew Metz, Tokyo Electron Technology Ctr. (United States)
Shannon Dunn, Tokyo Electron Technology Ctr. (United States)
Dave Hetzer, Tokyo Electron Technology Ctr. (United States)
Jason Cantone, Tokyo Electron America, Inc. (United States)
Kenichi Ueda, Tokyo Electron America, Inc. (United States)
Tom Winter, Tokyo Electron America, Inc. (United States)
Vaidyanathan Balasubramaniam, Tokyo Electron Technology Ctr. (United States)
Cherry Tang, JSR Micro, Inc. (United States)
Mark Slezak, JSR Micro, Inc. (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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