Share Email Print

Proceedings Paper

Estimation of cost comparison of lithography technologies at the 22-nm half-pitch node
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The cost of ownership (CoO) of candidate technologies for 22 nm half-pitch lithography is calculated. To more accurately compare technologies with different numbers of process steps, a model that includes deposition, etching, metrology, and other costs is created. For 22 nm half-pitch nodes, extreme ultraviolet lithography (EUVL) has a significant cost advantage over other technologies under certain mask cost assumptions. Double patterning, however, may be competitive under worst-case EUVL mask cost assumptions. Sensitivity studies of EUVL CoO to throughput and uptime show EUVL may be cost-competitive at lower uptime and throughput conditions. Finally, calculation of the CoO of 450 mm lithography shows that the expected cost reduction is between 0% and 15%.

Paper Details

Date Published: 17 March 2009
PDF: 10 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72710Y (17 March 2009); doi: 10.1117/12.814255
Show Author Affiliations
Andrea Wüest, SEMATECH, Inc. (United States)
Andrew J. Hazelton, Nikon Corp. (Japan)
Greg Hughes, SEMATECH, Inc. (United States)

Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

© SPIE. Terms of Use
Back to Top