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Proceedings Paper

Mask defect verification using actinic inspection and defect mitigation technology
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Paper Abstract

The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. The successful production of defect-free masks will depend on the timely development of defect inspection tools, including both mask blank inspection tools and absorber pattern inspection tools to meet the 22 nm half-pitch node. EUV mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360 is operated at SEMATECH's Mask blank Development Center (MBDC) in Albany, with sensitivity to multilayer defects down to 40~45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for the next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. This paper will also discuss the kind of infrastructure that will be required in the development and mass production stages.

Paper Details

Date Published: 18 March 2009
PDF: 9 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72713J (18 March 2009); doi: 10.1117/12.814249
Show Author Affiliations
Sungmin Huh, SEMATECH, Inc. (United States)
Patrick Kearney, SEMATECH, Inc. (United States)
Stefan Wurm, SEMATECH, Inc. (United States)
Frank Goodwin, SEMATECH, Inc. (United States)
Kenneth Goldberg, Lawrence Berkeley National Lab. (United States)
Iacopo Mochi, Lawrence Berkeley National Lab. (United States)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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