Share Email Print
cover

Proceedings Paper

Incorporating organosilanes into EUV photoresists: diphenyltrimethylsilylmethylsulfonium triflate as a new PAG
Author(s): Shalini Sharma; Yoichi Ogata; Clarion Tung; James M. Blackwell; Todd R. Younkin; Yoshi Hishiro; Joshua S. Figueroa; Arnold L. Rheingold
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The synthesis and characterization data for a new sulfonium photoacid generator (PAG), diphenyltrimethylsilylmethylsulfonium triflate (I), is reported. It is shown that the molecule undergoes rapid silyl group transfer to water or phenol in the presence of a strong, nucleophilic base such as trioctylamine (TOA). The resulting PAG, diphenyl-methylsulfonium triflate (II), is subsequently degraded by TOA via methyl group transfer from S to N leading to the formation of Ph2S and methyltriocylammonium triflate. Both I and II are stable when non-nucleophilic base quenchers are used. Dose-to-clear and patterning results obtained from EUV exposures at Intel-MET are presented, illustrating that increased sensitivity can be obtained with PAGs I and II relative to triphenylsulfonium triflate (TPSOTf), but that LWR is compromised.

Paper Details

Date Published: 1 April 2009
PDF: 12 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72733N (1 April 2009); doi: 10.1117/12.814220
Show Author Affiliations
Shalini Sharma, JSR Micro, Inc. (United States)
Yoichi Ogata, JSR Micro, Inc. (United States)
LBNL Molecular Foundry (United States)
Clarion Tung, LBNL Molecular Foundry (United States)
James M. Blackwell, LBNL Molecular Foundry (United States)
Intel Corp. (United States)
Todd R. Younkin, Intel Corp. (United States)
Yoshi Hishiro, JSR Micro, Inc. (United States)
Joshua S. Figueroa, Univ. of California, San Diego (United States)
Arnold L. Rheingold, Univ. of California, San Diego (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

© SPIE. Terms of Use
Back to Top