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Proceedings Paper

Impact of CD and overlay errors on double-patterning processes
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Paper Abstract

Double patterning (DP) is today the main solution to extend immersion lithography to the 32 nm node and beyond. Pitch splitting process with hardmask transfer and spacer process have been developed at CEA-LETI-Minatec. This paper focuses on experimental data using dry ArF lithography with a k1 factor of 0.20 ; the relative impact of each DP step on overlay and CD uniformity budgets is analyzed. In addition, topography issues related to the presence of the patterned hard mask layer during the second imaging step is also investigated. Tool-to-itself overlay, image placement on the reticle and wafer deformation induced by this DP process are evaluated experimentally and resulting errors on CD budget have been determined. CD uniformity error model developed by Nikon describing the relationship between CD and overlay in different DP processes is validated experimentally.

Paper Details

Date Published: 16 March 2009
PDF: 12 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72740W (16 March 2009); doi: 10.1117/12.814165
Show Author Affiliations
Céline Lapeyre, CEA-LETI-Minatec (France)
Sébastien Barnola, CEA-LETI-Minatec (France)
Isabelle Servin, CEA-LETI-Minatec (France)
Stéphanie Gaugirana, CEA-LETI-Minatec (France)
Vincent Salvetat, Nikon Precision Europe GmbH (France)
Nobutaka Magome, Nikon Corp. (Japan)
Andrew J. Hazelton, Nikon Corp. (Japan)
Martin McCallum, Nikon Precision Europe GmbH (United Kingdom)


Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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