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Proceedings Paper

3D ion multibeam processing with the CHARPAN PMLP tool and with the single ion-beam FIB tool optimized with the IonRevSim software
Author(s): S. Zaitsev; A. Svintsov; C. Ebm; S. Eder-Kapl; H. Loeschner; E. Platzgummer; G. Lalev; S. Dimov; V. Velkova; B. Basnar
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Paper Abstract

The paper demonstrates that the ion beam milling process can be modelled as a local isotropic etching without taking into account the material re-deposition during the sputtering. It also presents a software, IonRevSim, specifically developed to simulate the 3D ion structuring and thus to validate and if necessary to optimise off-line the processing parameters. In particular, employing the IonRevSim software it is possible to prepare the necessary data for performing 3D ion milling and then to simulate the 3D structuring process in order to validate it. These two main functions and their operating modes are discussed in the paper. Experimental verification based on optimised data prepared by IonRevSim was performed using both FIB tool and multi-beam CHARPAN PMLP tool. For both ion-patterning techniques good coincidence was demonstrated for structures of low aspect ration.

Paper Details

Date Published: 18 March 2009
PDF: 8 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72712P (18 March 2009); doi: 10.1117/12.814158
Show Author Affiliations
S. Zaitsev, Institute of Microelectronics Technology and High Purity Materials (Russian Federation)
A. Svintsov, Institute of Microelectronics Technology and High Purity Materials (Russian Federation)
C. Ebm, IMS Nanofabrication AG (Austria)
S. Eder-Kapl, IMS Nanofabrication AG (Austria)
H. Loeschner, IMS Nanofabrication AG (Austria)
E. Platzgummer, IMS Nanofabrication AG (Austria)
G. Lalev, Cardiff Univ. (United Kingdom)
S. Dimov, Cardiff Univ. (United Kingdom)
V. Velkova, Cardiff Univ. (United Kingdom)
B. Basnar, Vienna Univ. of Technology (Austria)

Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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