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Proceedings Paper

Optimization of BSE-detector for e-beam direct write lithography
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Paper Abstract

In this work, we investigated possible geometry optimizations of backscattered electron (BSE) detectors in order to significantly improve the signal to noise ratio (SNR) of shallow Si-topographic marks. To achieve this, Monte Carlo simulations of the BSE angular distribution as well as of the BSE exit position were performed. A comparison of some theoretical calculations with the respective experimental results allowed us to qualify the theoretical results. Based on these results, we are able to present an optimized BSE detector design featuring a significant improvement of the measured SNR.

Paper Details

Date Published: 18 March 2009
PDF: 8 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72712O (18 March 2009); doi: 10.1117/12.814156
Show Author Affiliations
H. Alves, Vistec Electron Beam GmbH (Germany)
P. Hahmann, Vistec Electron Beam GmbH (Germany)
M. Slodowski, Vistec Electron Beam GmbH (Germany)
C. G. Frase, Physikalisch-Technische Bundesanstalt (Germany)
D. Gnieser, Physikalisch-Technische Bundesanstalt (Germany)
Klaus-Peter Johnsen, Physikalisch-Technische Bundesanstalt (Germany)
H. Bosse, Physikalisch-Technische Bundesanstalt (Germany)

Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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