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Proceedings Paper

Manufacturability of ILT patterns in low-NA 193nm environment
Author(s): ChinTeong Lim; Vlad Temchenko; Ingo Meusel; Dieter Kaiser; Jens Schneider; Martin Niehoff
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Paper Abstract

With escalating costs of higher-NA exposure tools, lithography engineers are forced to evaluate life-span extension of currently available lower-NA exposure tools. In addition to common resolution enhancement techniques such as off-axis illumination, edge movement, or applying sub-resolution assist features, Inverse Lithography Technology (ILT) tools available commercially at this moment offer means of extending current in-house tool resolution and enlarging process window for random as well as periodic mask patterns. In this paper we explore ILT pattern simplification procedures and model calibration for a range of illumination conditions. We study random pattern fidelity and critical dimension stability across process window for 65nm contact layer, and compare silicon results for both conventional optical proximity correction and inverse lithography techniques.

Paper Details

Date Published: 16 March 2009
PDF: 9 pages
Proc. SPIE 7274, Optical Microlithography XXII, 727439 (16 March 2009); doi: 10.1117/12.814144
Show Author Affiliations
ChinTeong Lim, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Vlad Temchenko, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Ingo Meusel, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Dieter Kaiser, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Jens Schneider, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Martin Niehoff, Mentor Graphics Corp. (Germany)

Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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