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Proceedings Paper

Mask diffraction analysis and optimization for EUV masks
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Paper Abstract

This paper employs a direct analysis of the intensity and the phase of the diffracted light by rigorous electromagnetic field (EMF) simulations to investigate mask-induced imaging artifacts in EUV-lithography. Analysis of the diffraction efficiencies and phase differences between the diffraction orders versus mask and illumination parameters is used to explore EUV-specific imaging artifacts such as feature orientation dependent placement errors and feature sizes, shifts of the best focus position, process window asymmetries, and other aberration-like phenomena. The results of these simulations aim to understand the reason for these EUV-specific imaging artifacts and to devise strategies for their compensation. Finally, rigorous EMF models of light scattering from EUV-masks are applied to identify ideal mask absorber stacks using global optimization techniques.

Paper Details

Date Published: 18 March 2009
PDF: 10 pages
Proc. SPIE 7271, Alternative Lithographic Technologies, 72711E (18 March 2009); doi: 10.1117/12.814119
Show Author Affiliations
Andreas Erdmann, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Peter Evanschitzky, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Tim Fühner, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)


Published in SPIE Proceedings Vol. 7271:
Alternative Lithographic Technologies
Frank M. Schellenberg; Bruno M. La Fontaine, Editor(s)

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