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Proceedings Paper

Reduction of line width and edge roughness by resist reflow process for extreme ultra-violet lithography
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Paper Abstract

Extreme ultra-violet lithography (EUVL) has been prepared for next generation lithography for several years. We could get sub-22 nm line and space (L/S) pattern using EUVL, but there are still some problems such as roughness, sensitivity, and resolution. According to 2007 ITRS roadmap, line edge roughness (LER) has to be below 1.9 nm to get a 22 nm node, but it is too difficult to control line width roughness (LWR) because line width is determined by not only the post exposure bake (PEB) time, temperature and acid diffusion length, but also the component and size of the resist. A new method is suggested to reduce the roughness. The surface roughness can be smoothed by applying the resist reflow process (RRP) for the developed resist. We made resist profile which has surface roughness by applying exposure, PEB and development process for line and space pattern. The surface roughness is calculated by changing parameters such as the protected ratio of resin. The PEB time is also varied. We compared difference between 1:1 L/S and 1:3 L/S pattern for 22 nm. Developed resist baked above the glass transition temperature will flow and the surface will be smoothed. As a result, LER and LWR will be much smaller after RRP. The result shows that the decreasing ratio of LER due to RRP is larger when initial LER is large. We believe that current ~ 5 nm LWR can be smoothed to ~ 1 nm by using RRP after develop.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732D (1 April 2009); doi: 10.1117/12.814108
Show Author Affiliations
In Wook Cho, Hanyang Univ. (Korea, Republic of)
Joon-Min Park, Hanyang Univ. (Korea, Republic of)
Hyunsu Kim, Hanyang Univ. (Korea, Republic of)
Joo-Yoo Hong, Hanyang Univ. (Korea, Republic of)
Seong-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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