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Proceedings Paper

Properties of the novel deprotecting unit for next-generation ArF resist polymer
Author(s): Akinori Shibuya; Shuhei Yamaguchi; Yuko Yoshida; Michihiro Shirakawa
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Paper Abstract

Viewpoint of lithographic performance, the chemically amplified resist (CAR) is still promising candidates for the 32 nm node device manufacturing or below. However, CAR has an issue of low exposure latitude (EL) in the above node. To overcome the issue, it is important to control the acid diffusion at de-protecting process of the lithography system. We focused on a monomer unit that is able to control the acid diffusion during the post exposure bake (PEB) process. A novel secondary ester type methacrylate monomer was designed and synthesized as the unit that generates acid trapping ability according to the de-protecting reaction. The de-protecting reaction proceeded at general condition, and the acid trapping ability was confirmed by the model reaction in the solution. The unit must be useful as the adjusting unit of the acid diffusion. We also investigated the copolymers having this adjusting unit and the typical tertiary ester de-protecting unit for ArF resist main polymer. We will discuss the feature of the polymer including the de-protecting unit and its applications for next generation ArF chemically amplified resist.

Paper Details

Date Published: 1 April 2009
PDF: 12 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730H (1 April 2009); doi: 10.1117/12.814096
Show Author Affiliations
Akinori Shibuya, FUJIFILM Corp. (Japan)
Shuhei Yamaguchi, FUJIFILM Corp. (Japan)
Yuko Yoshida, FUJIFILM Corp. (Japan)
Michihiro Shirakawa, FUJIFILM Corp. (Japan)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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