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Proceedings Paper

Resolution and LWR improvements by acid diffusion control in EUV lithography
Author(s): Hideaki Tsubaki; Tooru Tsuchihashi; Tomotaka Tsuchimura
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Paper Abstract

A series of photoacid generator (PAG) with different anion size have been synthesized in order to investigate effects of diffusion length on exposure latitude (EL), resolution and line-width roughness (LWR) under EB and EUV exposure. Diffusion length measurement of these PAGs using a model bi-layer experiment revealed that acid diffusion length could be significantly reduced from 1.1 x 103 nm to 13.5 nm at PEB of 120 °C for 90 sec by utilizing the PAG having the biggest anchor group into anion. According to the suppression of acid diffusion, EL for both dense line and isolated line were well improved with maintaining high sensitivity under EB exposure. On the other hand, the relation between sensitivity and LWR were not improved at all. The same trend was also observed under EUV exposure. It is noteworthy that resolution was significantly improved by utilizing the PAG that shows the shortest acid diffusion length. As a result, relation between resolution and LWR was improved, and the Z-factor, which represents resist performance quantitatively, were also improved with the range from 9 % to 51 % by utilizing the PAG with shortest diffusion length into various resist formulations.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731K (1 April 2009); doi: 10.1117/12.814067
Show Author Affiliations
Hideaki Tsubaki, FUJIFILM Co., Ltd. (Japan)
Tooru Tsuchihashi, FUJIFILM Co., Ltd. (Japan)
Tomotaka Tsuchimura, FUJIFILM Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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