Share Email Print
cover

Proceedings Paper

Dissolution kinetics and deprotection reaction in chemically amplified resists upon exposure to extreme ultraviolet radiation
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Polymer structure effects on the dissolution kinetics and deprotection reaction were investigated to understand inherent extreme ultraviolet (EUV) resist characteristics because it is important for EUV lithography to select appropriate protecting group and protecting ratio. The difference of activation energy caused by protecting groups and protecting ratio was observed. For small protecting group such as tert-butoxy carbonyl group and ethoxy ethyl group, dependence of activation energy on protecting ratio was small. On the other hands, for bulky protecting group such as naphtoxy group protecting ratio significantly affect the activation energy probably due to the effect of steric hindrance. Also, the deterioration of resist sensitivity was observed with increase of protecting ratio while the dissolution slope increase with increase of protecting ratio. A slight difference in Rmax was observed due to the difference of resulting products because it is not chemically identical to polyhydroxystyrene (PHS) because of side reaction occurred during post exposure bake (PEB). Also, Rmin decreased with increase of protecting ratio. Thus, the dissolution rates and sensitivity were more affected by changing the protection ratio of polymer than the type of protecting group.

Paper Details

Date Published: 1 April 2009
PDF: 9 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731X (1 April 2009); doi: 10.1117/12.814066
Show Author Affiliations
Hiroki Yamamoto, Osaka Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)
Takeyoshi Mimura, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Takeshi Iwai, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Junichi Onodera, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

© SPIE. Terms of Use
Back to Top