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Proceedings Paper

Measurement of dimensions of resist mask elements below 100 nm with help of a scanning electron microscope
Author(s): V. P. Gavrilenko; V. A. Kalnov; Yu. A. Novikov; A. A. Orlikovsky; A. V. Rakov; P. A. Todua; K. A. Valiev; E. N. Zhikharev
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Paper Abstract

We studied the effect of focusing of the electron probe of a scanning electron microscope (SEM), operating in the mode of collection of slow secondary electrons, on the form of a signal obtained when scanning elements of nanorelief of two kinds of objects with electron probe: (a) resist masks, and (b) protrusions and trenches on silicon. The shift of the positions of the points of reference, the distance between which is usually used to determine the size of the relief elements, was observed. The linear dependence of such distance on the size of the electron probe was found. We propose a method to measure the width of the nanorelief element, based on the extrapolation of this linear dependence to the zeroth size of the electron probe. With the help of this method, we measured the widths of nanorelief elements of resist masks, as well as of protrusions and trenches on silicon.

Paper Details

Date Published: 23 March 2009
PDF: 9 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727227 (23 March 2009); doi: 10.1117/12.814062
Show Author Affiliations
V. P. Gavrilenko, Ctr. for Surface and Vacuum Research (Russian Federation)
V. A. Kalnov, Institute of Physics and Technology (Russian Federation)
Yu. A. Novikov, A.M. Prokhorov General Physics Institute (Russian Federation)
A. A. Orlikovsky, Institute of Physics and Technology (Russian Federation)
A. V. Rakov, A.M. Prokhorov General Physics Institute (Russian Federation)
P. A. Todua, Ctr. for Surface and Vacuum Research (Russian Federation)
K. A. Valiev, Institute of Physics and Technology (Russian Federation)
E. N. Zhikharev, Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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