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Proceedings Paper

Investigation of factors causing difference between simulation and real SEM image
Author(s): M. Kadowaki; A. Hamaguchi; H. Abe; Y. Yamazaki; S. Borisov; A. Ivanchikov; S. Babin
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Paper Abstract

As the candidates of factors to consider for accurate Monte Carlo simulation of SEM images, (1) the difference of cross-section between an approximate shape for simple simulation and a real pattern shape, (2) the influence of native oxide growing on a pattern surface, and (3) the potential distribution above the target surface are proposed. Each influence on SEM signal is studied by means of experiments and simulations for a Si trench pattern as a motif. Among these factors, native oxide of about 1nm in thickness has a significant influence that increases SEM signals at the top edge and the slope. We have assumed and discussed models for the native oxide effect.

Paper Details

Date Published: 23 March 2009
PDF: 9 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72723I (23 March 2009); doi: 10.1117/12.814036
Show Author Affiliations
M. Kadowaki, Toshiba Corp. (Japan)
A. Hamaguchi, Toshiba Corp. (Japan)
H. Abe, Toshiba Corp. (Japan)
Y. Yamazaki, Toshiba Corp. (Japan)
S. Borisov, aBeam Technologies (United States)
A. Ivanchikov, aBeam Technologies (United States)
S. Babin, aBeam Technologies (United States)

Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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