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Proceedings Paper

CD uniformity improvement for double-patterning lithography (litho-litho-etch) using freezing process
Author(s): Hisanori Sugimachi; Hitoshi Kosugi; Tsuyoshi Shibata; Junichi Kitano; Koichi Fujiwara; Kouji Itou; Michihiro Mita; Akimasa Soyano; Shiro Kusumoto; Motoyuki Shima; Yoshikazu Yamaguchi
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Paper Abstract

After an analysis of the factors that causes critical dimension (CD) variation in the lithography process of the LLE (Litho-Litho-Etch) double-patterning technology that employs the freezing process, an optimum process for freezing the resist patterns to reduce the CD variation, which occurs after the 2nd litho process, was achieved. By optimizing the track parameters of freezing process, CD variation is likely to be reduced not only in the 1st resist pattern but also in the 2nd resist pattern. The optimum conditions were adopted to form patterns of 40 nm resist lines and spaces in the evaluations conducted in this paper. The formation result showed improvement of 3 sigma of the within-wafer CD uniformity of both the 1st resist pattern and the 2nd resist pattern, by about 13% and 46% respectively.

Paper Details

Date Published: 1 April 2009
PDF: 7 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731D (1 April 2009); doi: 10.1117/12.814033
Show Author Affiliations
Hisanori Sugimachi, Tokyo Electron Kyushu Ltd. (Japan)
Hitoshi Kosugi, Tokyo Electron Kyushu Ltd. (Japan)
Tsuyoshi Shibata, Tokyo Electron Kyushu Ltd. (Japan)
Junichi Kitano, Tokyo Electron Kyushu Ltd. (Japan)
Koichi Fujiwara, JSR Corp. (Japan)
Kouji Itou, JSR Corp. (Japan)
Michihiro Mita, JSR Corp. (Japan)
Akimasa Soyano, JSR Corp. (Japan)
Shiro Kusumoto, JSR Corp. (Japan)
Motoyuki Shima, JSR Corp. (Japan)
Yoshikazu Yamaguchi, JSR Corp. (Japan)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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