Lithography process control becomes increasingly challenging as the design rules shrink. To tackle the issue of identifying the process window for lithography, we systematically compared three different approaches for 45 nm process wafer with two variables: Inspection mode (FEM or PWQ) and Analysis methodology (Manual or Design Based Binning). We found that PWQ + DBB provided the best results.

Date Published: 23 March 2009
PDF: 5 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72723D (23 March 2009); doi: 10.1117/12.814019

Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)