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Proceedings Paper

Comparative study of process window identification methods for 45 nm device and beyond
Author(s): HoSeong Kang; SooCheol Lee; MinHo Kim; KiHo Kim; YongTeak Jeong; YeonHo Pae; ChangHo Lee
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Paper Abstract

Lithography process control becomes increasingly challenging as the design rules shrink. To tackle the issue of identifying the process window for lithography, we systematically compared three different approaches for 45 nm process wafer with two variables: Inspection mode (FEM or PWQ) and Analysis methodology (Manual or Design Based Binning). We found that PWQ + DBB provided the best results.

Paper Details

Date Published: 23 March 2009
PDF: 5 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72723D (23 March 2009); doi: 10.1117/12.814019
Show Author Affiliations
HoSeong Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
SooCheol Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
MinHo Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
KiHo Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
YongTeak Jeong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
YeonHo Pae, KLA-Tencor Corp. (United States)
ChangHo Lee, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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