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Proceedings Paper

New approach to determine best beam focus
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Paper Abstract

As patterning technology advances beyond 45-nm half-pitch, the process window shrinks dramatically even with advanced resolution enhancement techniques. Beamfocus represents one of the process parameters that has a significant contribution to the overall critical feature dimension error budget. In building an optical model for proximity correction, the final model quality strongly depends on matching the focus used in the simulation to the experimental focus conditions. In this paper, we present a new method to determine the best beamfocus and verify its accuracy using actual test pattern measurements.

Paper Details

Date Published: 16 March 2009
PDF: 10 pages
Proc. SPIE 7274, Optical Microlithography XXII, 72742S (16 March 2009); doi: 10.1117/12.814015
Show Author Affiliations
Christian Zuniga, Mentor Graphics Corp. (United States)
Tamer M. Tawfik, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 7274:
Optical Microlithography XXII
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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