Share Email Print
cover

Proceedings Paper

Modified trilayer resist approach for ArF immersion lithography
Author(s): Tae-Hwan Oh; Yunsuk Nam; Suhyun Kim; Minkeun Kwak; Hyungsam Choi; Chansam Chang; Yongchul Kim; Hong-Jae Shin; Nae-In Lee
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

With the aid of ArF immersion lithography, semiconductor device node was extended sub-40nm and numerical aperture (NA) of litho process was exceeded to unity. In this high NA (over 1.0) lithography, however, it is very hard to control reflectivity between resist and substrate because of total reflection of light. To overcome this problem, the necessities of dual bottom antireflective coating (BARC) which have different refractivity became to realize. Trilayer resist process, which has two layers of spin-on hard mask (SOH) composed of silicon and carbon, was introduced and applied to various generation of ArF lithography from dry to immersion process. However, Lack of adhesion between photoresist (hydrophobic) and Si-SOH (hydrophilic) layer can cause pattern collapse problem, especially during process of line and space pattern. Herein we studied modified trilayer resist process. We introduced Alkyldisilazane(ADS) treatment after Si- SOH coating in trilayer resist process. Silazane functional groups in ADS react with silanols on the Si-SOH surface and silanols are converted to alkyl siloxane groups. Alkyl siloxane groups are more hydrophobic than silanols, so they can act as adhesion promoter during lithography process. And the hydrophobicity was increased when more hydrocarbons were inserted in ADS. We could improve pattern collapse in trilayer resist process and CD uniformity. This process can be optimized to various generations of ArF immersion lithography and further more.

Paper Details

Date Published: 19 May 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727314 (19 May 2009); doi: 10.1117/12.814013
Show Author Affiliations
Tae-Hwan Oh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Yunsuk Nam, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Suhyun Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Minkeun Kwak, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyungsam Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chansam Chang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Yongchul Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hong-Jae Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Nae-In Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

© SPIE. Terms of Use
Back to Top